本所声明  |  联系方式  |  中国科学院  |  数字认证(OA)   |  ARP  |  English  |  邮箱

标题: Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films
作者: Kuang, Siliang; Yang, Zhenni; Zhang, Ziqi; Sheng, Ziqian; Wei, Shenglong; Chen, Yihong; Xu, Wenjing; Yang, Ye; Chen, Duanyang; Qi, Hongji; Zhang, Kelvin H. L.
论文类型:
期刊/会议名称: MATERIALS TODAY PHYSICS
年: 2024
卷: 48
期: