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标题: Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication
作者: Xu, Xiaorui; Chen, Desen; Lu, Yaoping; Li, Titao; Han, Xueli; Chen, Duanyang; Qi, Hongji; Yang, Dan; Zhu, Minmin; Zhang, Haizhong; Lu, Xiaoqiang
论文类型:
期刊/会议名称: APPLIED PHYSICS LETTERS
年: 2024
卷: 125
期: 20