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6月24日学术报告

来源： 发布时间：2015-06-23【字体：大 中 小】

　　题目：Phase change materials: structure, design, and applications in photonics

　　姓名：Prof. Robert E. Simpson

　　单位：Singapore University of Technology and Design (SUTD) 

　　时间：2015年6月24日(周三) 下午：2:30

　　地点：2号楼302会议室 

Abstract: 

The crystallisation kinetics, electrical properties, and the refractive index of the well known GeTe-Sb2Te3 phase change data storage materials are commonly tuned by adjusting the composition or alloying with other elements. However, the effect of strain has not been exploited as a means to design the properties of phase change materials, yet in microelectronics material research, ‘strain engineering’ is the principal technique used to enhance the performance of metal oxide semiconductor field-effect transistors (MOSFETs). In this presentation I will describe how strain can be used to tune phase change materials and phase change superlattice structures. The talk will include our latest results from experiment and simulation whilst also projecting forward to discuss the application of phase change materials to photonics.

　　

Biography: 

Prof. Robert E. Simpson leads his group to lies in the design and development of new materials for applications in photonics, electronics and data storage. Before Joining SUTD, Robert spent his postdoc years in Japan and Spain. After completing his PhD from University of Southampton (UK), he was awarded a fellowship from Japanese Society for Promotion of Science at the CAN-FOR research group, directed by Prof Junji Tominaga, at the Japanese national institute for Advanced Industrial Science and Technology (AIST). In Spain Robert joined the group of Prof Valerio Pruneri as a COFUND Marie Currie Fellow at the Institute of Photonic Sciences (ICFO) in Barcelona. In 2012 Robert moved to the Singapore University of Technology and Design, where he formed the ACTA research group. The ACTA research group aims to exploit atomistic modelling and experimentation to design new functional chalcogenide materials for applications in photonics, data storage and nanoelectronics.

　　

　　                                                         所办公室

　　                                                       2015年6月23日

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