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8月21日学术报告

来源： 发布时间：2014-08-18【字体：大 中 小】

　　题目：Design aspects of laser diodes for industrial grade high power laser systems　 

　　姓名：Berthold Schmidt博士　　 

　　单位：TRUMPF Laser GmbH　　 

　　时间：2014年8月21日（星期四） 上午9:30  

　　地点：溢智厅   

　　  

　　Abstract 

　　High power laser diodes are key elements within TRUMPF’s Disk-, Fiber- and Direct Diode laser systems yielding kWs of light output power. The talk overviews the most prominent industrial applications of these systems. In addition, related semiconductor laser design aspects like waveguide structure, epitaxial design, design for scalability and reliability are explored. Various chip form factors, integration and testing requirements in reference to system performance will be presented.   

　　  

　　Berthold Schmidt 

　　Dr. Berthold Schmidt is R&D coordinator at TRUMPF Laser GmbH supporting the realization of new, diode-based laser systems. Before joining TRUMPF he was COO and later on CEO at Intense Ltd.. Prior to that he was promoting the industrial High Power Laser group of Bookham, Switzerland in his role as Business Development and Marketing Director.  Previous to these activities in the industrial domain, he was R&D manager at JDS Uniphase and later on Nortel Networks, where he was responsible for the development, qualification and implementation of 980nm pump laser diodes for telecom applications with their rigid reliability expectations. 

　　  

　　Berthold Schmidt graduated from the Julius-Maximilians Universität at Würzburg, Germany. He received the M.Sc. from SUNY University at Albany, USA, and his Ph.D. degree from the Technical University at Munich, Germany working on tunable twin guide (TTG) laser diodes. Berthold holds an executive Bachelor of Business Administration (BBA) degree from the GSBA in Zurich, Switzerland. He possesses various patents on the design of high power laser diodes and has (co)authored about 60 papers, conference papers and book chapters. Berthold Schmidt is member of the SPIE, SSOM and IEEE. 

　　  

　　                                                         所办公室 

　　                                                       2014年8月18日 

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